Invention Application
US20050059209A1 Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
失效
具有自对准ONO结构的局部长度氮化物SONOS器件及其制造方法
- Patent Title: Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
- Patent Title (中): 具有自对准ONO结构的局部长度氮化物SONOS器件及其制造方法
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Application No.: US10832948Application Date: 2004-04-27
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Publication No.: US20050059209A1Publication Date: 2005-03-17
- Inventor: Hee-Seog Jeon , Seung-Beom Yoon , Yong-Tae Kim
- Applicant: Hee-Seog Jeon , Seung-Beom Yoon , Yong-Tae Kim
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR03-63578 20030915
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/336 ; H01L21/8242 ; H01L21/8246 ; H01L27/115 ; H01L29/792
Abstract:
In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.
Public/Granted literature
- US07064378B2 Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same Public/Granted day:2006-06-20
Information query
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