发明申请
- 专利标题： Semiconductor light emitting device
- 专利标题（中）： 半导体发光器件
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申请号： US10829306申请日： 2004-04-20
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公开(公告)号： US20050062054A1公开(公告)日： 2005-03-24
- 发明人: Shinsuke Fujiwara , Takao Nakamura , Hiroki Mori , Koji Katayama
- 申请人： Shinsuke Fujiwara , Takao Nakamura , Hiroki Mori , Koji Katayama
- 申请人地址： JP Osaka
- 专利权人： Sumitomo Electric Industries. Ltd.
- 当前专利权人： Sumitomo Electric Industries. Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-328088(P) 20030919; JP2003-390261(P) 20031120; JP2003-401557(P) 20031201; JP2003-401560(P) 20031201
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/28 ; H01L33/00
摘要：
A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer positioned between an n-type ZnMgSSe cladding layer and a p-type ZnMgSSe cladding layer, and has a barrier layer having a band gap larger than that of the p-type ZnMgSSe cladding layer, provided between the active layer and the p-type ZnMgSSe cladding layer.