Invention Application
- Patent Title: Etching method for manufacturing semiconductor device
- Patent Title (中): 蚀刻方法制造半导体器件
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Application No.: US10763356Application Date: 2004-01-23
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Publication No.: US20050064674A1Publication Date: 2005-03-24
- Inventor: Won-Jun Lee , Byoung -Moon Yoon , In-Seak Hwang , Yong-Sun Ko
- Applicant: Won-Jun Lee , Byoung -Moon Yoon , In-Seak Hwang , Yong-Sun Ko
- Priority: KR2003-65533 20030922
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/02 ; H01L21/311 ; H01L21/20 ; H01L21/302 ; H01L21/461
Abstract:
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.
Public/Granted literature
- US07338610B2 Etching method for manufacturing semiconductor device Public/Granted day:2008-03-04
Information query
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