Invention Application
US20050064719A1 Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
失效
通过选择性侧壁聚合物沉积控制光刻胶修整工艺的临界尺寸微载荷的方法
- Patent Title: Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
- Patent Title (中): 通过选择性侧壁聚合物沉积控制光刻胶修整工艺的临界尺寸微载荷的方法
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Application No.: US10665934Application Date: 2003-09-19
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Publication No.: US20050064719A1Publication Date: 2005-03-24
- Inventor: Wei Liu , David Mui
- Applicant: Wei Liu , David Mui
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; G03F7/40 ; H01L21/027 ; H01L21/311 ; H01L21/302 ; H01L21/00 ; H01L21/461
Abstract:
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.
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Information query
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