发明申请
- 专利标题： Deposition of silicon-containing films from hexachlorodisilane
- 专利标题（中）： 从六氯二硅烷中沉积含硅膜
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申请号： US10673375申请日： 2003-09-30
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公开(公告)号： US20050066892A1公开(公告)日： 2005-03-31
- 发明人: Anthony Dip , Seungho Oh , Allen Leith
- 申请人： Anthony Dip , Seungho Oh , Allen Leith
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; C30B25/02 ; C30B29/06 ; H01L21/20 ; H01L21/205 ; C30B1/00 ; C23C16/00 ; H01L21/36
摘要：
A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.