Invention Application
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10945902Application Date: 2004-09-22
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Publication No.: US20050067707A1Publication Date: 2005-03-31
- Inventor: Shin Hashimoto , Tadaaki Mimura
- Applicant: Shin Hashimoto , Tadaaki Mimura
- Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Current Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Priority: JP2003-335267 20030926
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/28 ; H01L21/283 ; H01L21/66 ; H01L23/485 ; H01L23/522 ; H01L23/532 ; H01L23/48
Abstract:
A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate.
Public/Granted literature
- US07312530B2 Semiconductor device with multilayered metal pattern Public/Granted day:2007-12-25
Information query
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