发明申请
- 专利标题： Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones
- 专利标题（中）： 用于补偿不使用曝光区重叠的无掩模光刻系统中印刷图案的缝合干扰的方法和系统
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申请号： US10673922申请日： 2003-09-30
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公开(公告)号： US20050068467A1公开(公告)日： 2005-03-31
- 发明人: Arno Bleeker , Wenceslao Cebuhar , Azat Latypov
- 申请人： Arno Bleeker , Wenceslao Cebuhar , Azat Latypov
- 主分类号： G02F1/1335
- IPC分类号： G02F1/1335 ; G03F7/20 ; H01L21/027
摘要：
A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.
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