Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process

Invention Application

US20050069821A1 Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process 失效

Title translation: 在半导体光刻显影工艺中用于缺陷还原的牺牲表面活性预湿法

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Patent Title: Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process
Patent Title (中): 在半导体光刻显影工艺中用于缺陷还原的牺牲表面活性预湿法
Application No.: US10675419

Application Date: 2003-09-30
Publication No.: US20050069821A1

Publication Date: 2005-03-31
Inventor: John Kulp
Applicant: John Kulp
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Main IPC: G03F7/30
IPC: G03F7/30 ; G03F7/32 ; G03C5/18

Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process

Abstract:

A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.

Abstract(Chinese):

一种用于在基板上显影抗蚀剂的方法和装置，其中先将含牺牲表面活性剂的液体施加到抗蚀剂上作为预处理，以减少显影工艺缺陷并改善显影处理时间和抗蚀剂的均匀性。预处理之后，向抗蚀剂供给显影液，然后显影抗蚀剂。

Public/Granted literature

US07498124B2 Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process Public/Granted day:2009-03-03

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Global Dossier Espacenet

IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）
G03F7/26	.感光材料的处理及其设备（G03F7/12至G03F7/24优先）
G03F7/30	..用液体消除影像的