Invention Application
- Patent Title: Method of chemical mechanical polishing
- Patent Title (中): 化学机械抛光方法
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Application No.: US10920323Application Date: 2004-08-18
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Publication No.: US20050070091A1Publication Date: 2005-03-31
- Inventor: Sung-Bae Lee , Sang-Rok Ha , Hyo-Jong Lee
- Applicant: Sung-Bae Lee , Sang-Rok Ha , Hyo-Jong Lee
- Priority: KR2003-62751 20030908
- Main IPC: B24B37/04
- IPC: B24B37/04 ; H01L21/3105 ; H01L21/321 ; B24B1/00 ; H01L21/4763

Abstract:
A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.
Public/Granted literature
- US07048612B2 Method of chemical mechanical polishing Public/Granted day:2006-05-23
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