Invention Application
- Patent Title: Electron emitter
- Patent Title (中): 电子发射体
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Application No.: US10730754Application Date: 2003-12-08
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Publication No.: US20050073233A1Publication Date: 2005-04-07
- Inventor: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada , Takayoshi Akao
- Applicant: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada , Takayoshi Akao
- Applicant Address: JP Nagoya-City
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya-City
- Priority: JP2003-345992 20031003
- Main IPC: G09G3/22
- IPC: G09G3/22 ; H01J1/312 ; H01J31/12 ; H01J63/02 ; H01J1/38

Abstract:
An electron emitter has an emitter made of a dielectric material, and an upper electrode and a lower electrode to which a drive voltage is applied to emit electrons. The upper electrode is formed on a first surface of the substance serving as the emitter, and the lower electrode is formed on a second surface of the substance serving as the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. The upper electrode has a surface which faces the emitter in peripheral portions of the through regions and which is spaced from the emitter.
Public/Granted literature
- US07176609B2 High emission low voltage electron emitter Public/Granted day:2007-02-13
Information query
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