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    Emitter for electron-beam projection lithography system and manufacturing method thereof
    3.
    发明授权
    Emitter for electron-beam projection lithography system and manufacturing method thereof 失效
    电子束投影光刻系统的发射体及其制造方法

    公开(公告)号：US06953946B2

    公开(公告)日：2005-10-11

    申请号：US10674459

    申请日：2003-10-01

    Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

    Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

    IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L29/12 ,  H01L29/82 ,  H01L43/00

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

    Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

    Abstract translation: 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

    Ballistic electron surface-emitting device emitter, and field emission display and field emission-type backlight device using the same
    4.
    发明申请
    Ballistic electron surface-emitting device emitter, and field emission display and field emission-type backlight device using the same 失效
    弹道电子表面发射器件发射器，场致发射显示器和场致发射型背光装置使用

    公开(公告)号：US20050184642A1

    公开(公告)日：2005-08-25

    申请号：US11063965

    申请日：2005-02-24

    Applicant: Tae-Sik Oh ,  Jong-Min Kim

    Inventor： Tae-Sik Oh ,  Jong-Min Kim

    IPC: H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J1/312 ,  H01J1/62 ,  H01J31/12 ,  H01J63/06

    CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J31/127 ,  H01J63/06 ,  H01J2201/30469

    Abstract: A ballistic electron surface-emitting device (BSD) emitter that can be used in a field emission display (FED). The emitter being made of metallic carbon nanotubes extending in a direction that is normal to a surface of the cathode. The carbon nanotubes are designed so that electrons therein can experience a ballistic effect where the mean free path between collisions is as large or larger than a length of the carbon nanotube and that the width of the carbon nanotube being a fermi wavelength. On an opposite end of the carbon nanotubes is a thin metal electrode layer and a thin insulating layer to protect the carbon nanotubes from damage.

    Abstract translation: 可用于场发射显示（FED）的弹道电子表面发射器件（BSD）发射器。 发射极由金属碳纳米管制成，其沿垂直于阴极表面的方向延伸。 碳纳米管被设计成使得其中的电子可以经历弹道效应，其中碰撞之间的平均自由程大于或大于碳纳米管的长度，并且碳纳米管的宽度是费米波长。 在碳纳米管的另一端是薄金属电极层和薄的绝缘层，以保护碳纳米管免受损坏。

    Planar electron emitter with extended lifetime and system using same
    5.
    发明授权
    Planar electron emitter with extended lifetime and system using same 失效
    具有延长使用寿命的平面电子发射体和使用其的系统

    公开(公告)号：US06891176B2

    公开(公告)日：2005-05-10

    申请号：US10601090

    申请日：2003-06-20

    Applicant: Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

    Inventor： Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

    IPC: G11B9/10 ,  H01J1/312 ,  H01J7/24 ,  H01J37/06 ,  H01J37/317

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

    Abstract: Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

    Abstract translation: 金属 - 绝缘体 - 金属平面电子发射体（PEES）有潜力用于未来几代半导体器件的先进光刻技术。 然而，PEE的寿命有限，限制了其商业应用。 据信，PEE的有限寿命受到来自阳极的金属离子的扩散的限制。 内扩散可以以多种不同的方式进行反驳。 一种方法是将PEE冷却到低于室温的温度。 这降低了金属离子迁移率，因此金属离子不太可能扩散到绝缘体层中。 另一种方法是偶尔从用于产生电子束的极性反转PEE两端的电位。 这抵消了驱动从PEE阳极到PEE阴极的带正电荷的金属离子的电驱动力。

    Electron emission device and display device using the same
    8.
    发明授权
    Electron emission device and display device using the same 失效
    电子发射装置及其使用的显示装置

    公开(公告)号：US5990605A

    公开(公告)日：1999-11-23

    申请号：US44819

    申请日：1998-03-20

    Applicant: Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito ,  Masataka Yamaguchi ,  Shingo Iwasaki ,  Nobuyasu Negishi ,  Takashi Chuman

    Inventor： Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito ,  Masataka Yamaguchi ,  Shingo Iwasaki ,  Nobuyasu Negishi ,  Takashi Chuman

    IPC: H01J1/312 ,  H01J1/05

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2329/00

    Abstract: An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.

    Abstract translation: 电子发射装置包括：半导体层; 多孔半导体; 和依次层叠的薄膜金属电极。 电极面对真空空间。 多孔半导体层具有至少两个以上具有在厚度方向上彼此不同的孔隙率的孔隙率变化层。 当在半导体层和薄膜金属电极之间施加电场时，电子发射器件发射电子。 可以在多孔半导体层和薄膜金属电极之间形成由选自氧化硅或氮化硅的材料制成的绝缘体层。 多孔半导体层的Si骨架被氧化或氮化。

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