Invention Application
- Patent Title: Photomask and method for forming pattern
- Patent Title (中): 光掩模和形成图案的方法
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Application No.: US10957599Application Date: 2004-10-05
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Publication No.: US20050074682A1Publication Date: 2005-04-07
- Inventor: Kenji Noda , Shin Hashimoto
- Applicant: Kenji Noda , Shin Hashimoto
- Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Current Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Priority: JP2003-346832 20031006
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03C5/00 ; G03F1/08 ; G03F1/14 ; G03F7/20

Abstract:
A photomask includes, on a translucent substrate, three or more first light-shielding portions each in insular shape having a property of shielding exposure light and spaced equidistantly, a second light-shielding portion having a property of shielding the exposure light and formed to connect the adjacent first light-shielding portions, and first light-transmitting portions each in slit shape having a property of transmitting the exposure light and formed to be surrounded with the first and second light-shielding portions. The second light-shielding portion is formed to contain a point located equidistantly from the three or more first light-shielding portions.
Public/Granted literature
- US07582394B2 Photomask and method for forming pattern Public/Granted day:2009-09-01
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