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发明申请
US20050075052A1 Method and system for planarizing integrated circuit material 有权
用于平面化集成电路材料的方法和系统

Method and system for planarizing integrated circuit material
摘要：
For planarizing an IC (integrate circuit) material, a first slurry is dispensed for a first planarization of the IC material using the first slurry, and a second slurry is dispensed for a second planarization of the IC material using the second slurry. The first and second slurries are different. For example, the first slurry is silica based for faster planarization during the first planarization. Thereafter, the second planarization is performed with the second slurry that is ceria based with higher planarity for attaining sufficient planarization of the IC material.
摘要（中）：

为了平坦化IC（集成电路）材料，使用第一浆料分配第一浆料以使IC材料的第一平面化，并且使用第二浆料分配第二浆料以进行IC材料的第二平面化。 第一和第二种浆料是不同的。 例如，第一浆料是二氧化硅基，用于在第一平面化期间更快的平坦化。 此后，利用二氧化铈为基础，以更高的平面度进行第二平坦化，以获得IC材料的充分平坦化。

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