发明申请
- 专利标题： Resistive device and method for its production
- 专利标题（中）： 电阻装置及其制造方法
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申请号： US10922367申请日： 2004-08-20
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公开(公告)号： US20050077579A1公开(公告)日： 2005-04-14
- 发明人: Stefan Pompl
- 申请人： Stefan Pompl
- 申请人地址： DE Munchen
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munchen
- 优先权： DE10338689.0-33 20030822
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L27/08 ; H01L29/76 ; H01L29/94 ; H01L31/062
摘要：
A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the second region, and wherein a resistance-determining width of a current path through the first region is determined by a portion of a doping boundary between the first region and the second region.
公开/授权文献
- US07208814B2 Resistive device and method for its production 公开/授权日：2007-04-24
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