发明申请
- 专利标题： Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
- 专利标题（中）： 电子束检查方法及装置及半导体制造方法及其制造线
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申请号： US11003506申请日： 2004-12-06
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公开(公告)号： US20050082476A1公开(公告)日： 2005-04-21
- 发明人: Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
- 申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
- 优先权： JP08-075846 19960329; JP08-193143 19960723
- 主分类号： G01Q20/00
- IPC分类号： G01Q20/00 ; G01Q30/04 ; G01Q30/02 ; G01Q60/00 ; H01J37/20 ; H01J37/22 ; H01J37/256 ; H01J37/28 ; H01L21/66 ; G01N23/00
摘要：
An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electrons and reflected electrons emanated from the object in response to the irradiation. An image of the object is obtained from the detected electron by using positional information of the stage and inspection or measurement of the object is conducted using and obtained image. In the detection, an electric field in the vicinity of the object mounted on the stage is controlled so that at least one secondary electrons and the reflected electrons emanated from the object in response to the irradiation of the electron beam are decelerated.
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