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    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
    6.
    发明授权
    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 有权
    电子束检查方法及装置及半导体制造方法及其制造线

    公开(公告)号：US06172365B2

    公开(公告)日：2001-01-09

    申请号：US09437313

    申请日：1999-11-10

    申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

    发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

    IPC分类号： H01J3728

    CPC分类号： H01J37/28 ,  H01J2237/2817

    摘要： An electron beam inspection method including the steps of irradiating an electron beam to an object to be inspected, detecting at least one of a secondary electron and a reflected electron emanated from the object by the irradiation of the electron beam, and obtaining an image of the object from the detected electron. The method further includes the steps of controlling an electric field in a neighborhood of the object for filtering the at least one of the secondary and reflected electron emanated from the object so as to control the contrast of the image, detecting at least one of the secondary and reflected electron emanated from the object which passes through the electric field in the neighborhood of the object by the irradiation of the electron beam, and conducting inspection or measurement of the object on the basis of a detected signal of the detection in the controlled electric field.

    摘要翻译： 一种电子束检查方法，包括以下步骤：将电子束照射到待检查对象，通过电子束的照射检测从物体发射的二次电子和反射电子中的至少一种，并获得 物体来自被检测的电子。 该方法还包括以下步骤：控制物体附近的电场，以对从物体发出的次级和反射电子中的至少一种进行过滤，以便控制图像的对比度，检测二次 以及通过电子束的照射而在物体附近通过电场发射的反射电子，并且根据检测到的受控电场的检测信号进行物体的检查或测量 。

    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
    7.
    发明授权
    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 失效
    电子束检查方法及装置及半导体制造方法及其制造线

    公开(公告)号：US5986263A

    公开(公告)日：1999-11-16

    申请号：US824413

    申请日：1997-03-26

    申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

    发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Yukio Matsuyama ,  Yuji Takagi ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto

    IPC分类号： G01Q20/00 ,  G01Q30/04 ,  G01Q30/02 ,  G01Q60/00 ,  H01J37/20 ,  H01J37/22 ,  H01J37/256 ,  H01J37/28 ,  H01L21/66

    CPC分类号： H01J37/28 ,  H01J2237/2817

    摘要： An electron beam inspection method and apparatus. The method includes controlling acceleration voltage of electron beam and electric field on a sample, beam current, beam diameter, image detection rate, image dimensions, precharge, discharge, or a combination of them, exposing an object to the electron beam, detecting in a sensor a physical change generated from the object, and inspecting or measuring the object on the basis of a signal representing the detected physical change. The apparatus includes an electron source (potential E2) for generating an electron beam, a deflector for scanning generated electrons, an objective lens for focusing the electron beam upon the object, a grid (potential E1) disposed between the object and the objective lens, a wafer holder (potential E0) for holding the object, a sensor for detecting generated secondary electrons, a potential controller for controlling the potential E0, E1 and E2, and a storage for storing optimum potential conditions. By changing conditions of an electron optic system such as potential E0, E1 and E2, the acceleration voltage and electric field on the object are controlled. For a material located at least in an upper layer of a plurality of materials forming the object, the secondary electron yield ratio can be made nearly unity and appropriate contrast of an obtained image can be provided with minimized influence of charge up.

    摘要翻译： 电子束检查方法和装置。 该方法包括控制电子束的加速电压和样品上的电场，束电流，光束直径，图像检测率，图像尺寸，预充电，放电或它们的组合，将物体暴露于电子束，在 传感器从物体产生的物理变化，以及根据表示检测到的物理变化的信号检查或测量物体。 该装置包括用于产生电子束的电子源（电位E2），用于扫描产生的电子的偏转器，用于将电子束聚焦在物体上的物镜，设置在物体和物镜之间的格栅（电位E1） 用于保持物体的晶片保持器（电位E0），用于检测产生的二次电子的传感器，用于控制电位E0，E1和E2的电位控制器，以及用于存储最佳电位条件的存储器。 通过改变诸如电位E0，E1和E2的电子光学系统的状态，控制对象上的加速电压和电场。 对于至少位于形成物体的多种材料的上层中的材料，二次电子屈服比可以几乎一致，并且可以以最小化的充电影响来提供所获得的图像的适当的对比度。

    Method and system for inspecting a pattern
    8.
    发明授权
    Method and system for inspecting a pattern 失效
    检查图案的方法和系统

    公开(公告)号：US07260256B2

    公开(公告)日：2007-08-21

    申请号：US09571938

    申请日：2000-05-16

    申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto ,  Chie Shishido

    发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto ,  Chie Shishido

    IPC分类号： G06K9/00

    CPC分类号： G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

    摘要： The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in the Y direction are mixedly present. The cross comparison between a notice point and comparison points, for example which are repetitive pitches away from the notice point, is carried out, and only the portion having the difference which can be found out with any of the comparison points is extracted as a defect candidate, which results in that the portion having the two-dimensional repetition as well as the portion having the repetition only in the X direction or in the Y direction can be inspected. As a result, while the portion, such as an isolated point, having no repetition both in the X direction and in the Y direction is extracted as the defect candidate, the defect candidate is not treated as the defect in the case where the defect candidate of interest occurs regularly in a plurality of objects to be inspected, so that such a defect candidate is excluded to extract only a true defect.

    摘要翻译： 本发明涉及通过简单的坐标指定来检测缺陷，在检查具有多个图案的物体时，其中具有二维重复的部分和仅在X方向上重复的部分和Y 方向混合存在。 执行通知点和比较点之间的交叉比较，例如，距离通知点的重复间距是比较点，并且只有具有任何比较点可以找出的具有差异的部分被提取为缺陷 候选，这导致可以检查具有二维重复的部分以及仅在X方向或Y方向上具有重复的部分。 结果，虽然提取了在X方向和Y方向上都没有重复的诸如孤立点的部分作为缺陷候选，但是在缺陷候选者的情况下，缺陷候选不被视为缺陷 感兴趣的事件定期发生在要检查的多个对象中，因此排除这样的缺陷候选者仅提取真实的缺陷。

    Method and system for inspecting a pattern
    9.
    发明授权
    Method and system for inspecting a pattern 失效
    检查图案的方法和系统

    公开(公告)号：US06347150B1

    公开(公告)日：2002-02-12

    申请号：US08932193

    申请日：1997-09-17

    申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto ,  Chie Shishido

    发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto ,  Chie Shishido

    IPC分类号： G06K964

    CPC分类号： G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

    摘要： The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in the Y direction are mixedly present. The cross comparison between a notice point and comparison points, for example, which are repetitive pitches away from the notice point, is carried out, and only the portion having the difference which can be found out with any of the comparison points is extracted as a defect candidate, which results in that the portion having the two-dimensional repetition as well as the portion having the repetition only in the X direction or in the Y direction can be inspected. As a result, while the portion, such as an isolated point, having no repetition both in the X direction and in the Y direction is extracted as the defect candidate, the defect candidate is not treated as the defect in the case where the defect candidate of interest occurs regularly in a plurality of objects to be inspected, so that such a defect candidate is excluded to extract only a true defect.

    摘要翻译： 本发明涉及通过简单的坐标指定来检测缺陷，在检查具有多个图案的物体时，其中具有二维重复的部分和仅在X方向上重复的部分和Y 方向混合存在。 执行通知点与比较点之间的交叉比较，比较点例如是远离通知点的重复间距，并且只有具有任何一个比较点可以发现的具有差异的部分被提取为 缺陷候补，这导致可以检查具有二维重复的部分以及仅在X方向或Y方向上具有重复的部分。 结果，虽然提取了在X方向和Y方向上都没有重复的诸如孤立点的部分作为缺陷候选，但是在缺陷候选者的情况下，缺陷候选不被视为缺陷 感兴趣的事件定期发生在要检查的多个对象中，因此排除这样的缺陷候选者仅提取真实的缺陷。