发明申请
- 专利标题： MIM capacitor structure and method of manufacture
- 专利标题（中）： MIM电容器结构及制造方法
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申请号： US10689294申请日： 2003-10-20
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公开(公告)号： US20050082586A1公开(公告)日： 2005-04-21
- 发明人: Kuo-Chi Tu , Chun-Yao Chen , Shou-Gwo Wuu , Chen-Jong Wang
- 申请人： Kuo-Chi Tu , Chun-Yao Chen , Shou-Gwo Wuu , Chen-Jong Wang
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L29/76 ; H01L21/20
摘要：
A metal-insulator-metal (MIM) capacitor structure and method of manufacturing thereof. A plurality of MIM capacitor patterns is formed in two or more insulating layers. The insulating layers may comprise a via layer and a metallization layer of a semiconductor device. A top portion of the top insulating layer is recessed in a region between at least two adjacent MIM capacitor patterns. When the top plate material of the MIM capacitors is deposited, the top plate material fills the recessed area of the top insulating layer between the adjacent MIM capacitor pattern, forming a connecting region that couples together the top plates of the adjacent MIM capacitors. A portion of the MIM capacitor bottom electrode may be formed in a first metallization layer of the semiconductor device.
公开/授权文献
- US07282757B2 MIM capacitor structure and method of manufacture 公开/授权日：2007-10-16
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