发明申请
- 专利标题： Semiconductor memory device driven with low voltage
- 专利标题（中）： 半导体存储器件采用低电压驱动
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申请号： US10972537申请日： 2004-10-26
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公开(公告)号： US20050088881A1公开(公告)日： 2005-04-28
- 发明人: Takeo Miki , Yasuhiko Tsukikawa , Shinji Tanaka
- 申请人： Takeo Miki , Yasuhiko Tsukikawa , Shinji Tanaka
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2003-367660(P) 20031028
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; G11C5/00 ; G11C5/14 ; G11C7/06 ; G11C7/08 ; G11C7/12 ; G11C11/401 ; G11C11/407 ; G11C11/4074 ; G11C11/409 ; H01L27/108
摘要：
Independent power supply systems are provided for a peripheral circuit other than a column decoder, an array-relevant circuit, and a column decoder respectively, so that a peripheral power supply voltage, an array power supply voltage, and a column decoder power supply voltage generated independently of each other are supplied to the peripheral circuit, the array-relevant circuit, and the column decoder as an operating power supply voltage, respectively. Preferably, the column decoder power supply voltage during normal operation is set as an intermediate voltage between the peripheral power supply voltage and the array power supply voltage. Thus, an array configuration suitable for driving a transistor with a low voltage in order to achieve lower power consumption can be obtained.
公开/授权文献
- US07102935B2 Semiconductor memory device driven with low voltage 公开/授权日：2006-09-05
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