发明申请
- 专利标题: Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
- 专利标题(中): 水平电场型液晶显示装置薄膜晶体管基板及其制造方法
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申请号: US10979096申请日: 2004-11-02
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公开(公告)号: US20050092991A1公开(公告)日: 2005-05-05
- 发明人: Byung Ahn , Oh Kwon , Heung Cho
- 申请人: Byung Ahn , Oh Kwon , Heung Cho
- 专利权人: LG.Philips LCD Co., Ltd.
- 当前专利权人: LG.Philips LCD Co., Ltd.
- 优先权: KRP2003-77659 20031104
- 主分类号: G02F1/133
- IPC分类号: G02F1/133 ; G02F1/1343 ; G02F1/136 ; G02F1/1362 ; G02F1/1368 ; G03F7/20 ; H01L21/00 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L31/20
摘要:
A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.