发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10975919申请日： 2004-10-26
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公开(公告)号： US20050093024A1公开(公告)日： 2005-05-05
- 发明人: Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
- 申请人： Hiroki Sakamoto , Yasuhiro Kawasaki , Kenji Yoneda
- 申请人地址： JP Kadoma-shi
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Kadoma-shi
- 优先权： JP2002-065844 20020311
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; C23C16/34 ; H01L21/28 ; H01L21/314 ; H01L21/318 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/73 ; H01L21/8238
摘要：
A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
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