发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10811488申请日： 2004-03-29
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公开(公告)号： US20050093051A1公开(公告)日： 2005-05-05
- 发明人: Jun Yoshida , Yutaka Takinomi , Hiroyuki Abe
- 申请人： Jun Yoshida , Yutaka Takinomi , Hiroyuki Abe
- 优先权： JP2003-368242 20031029
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/768 ; H01L21/82 ; H01L21/822 ; H01L23/52 ; H01L23/522 ; H01L23/528 ; H01L27/04 ; H01L27/108
摘要：
A semiconductor device capable of effectively eliminating noise on multilayered power lines with a bypass capacitor. A first power line is connected to the bypass capacitor. A second power line is a line from which a part located above the bypass capacitor is removed. Contacts connect the first and second power lines. Therefore, noise appearing on the second power line travels to the first power line, resulting in effectively eliminating the noise with the bypass capacitor.
公开/授权文献
- US07157752B2 Semiconductor device 公开/授权日：2007-01-02
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