发明申请
US20050093077A1 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding
有权
CMOS在具有不同晶体取向的混合衬底上使用硅到硅直接晶片结合
- 专利标题： CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding
- 专利标题（中）： CMOS在具有不同晶体取向的混合衬底上使用硅到硅直接晶片结合
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申请号： US10799380申请日： 2004-03-12
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公开(公告)号： US20050093077A1公开(公告)日： 2005-05-05
- 发明人: Meikei Ieong , Alexander Reznicek , Min Yang
- 申请人： Meikei Ieong , Alexander Reznicek , Min Yang
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/8238 ; H01L29/76
摘要：
A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive or insulating interface is provided. Also provided are the hybrid substrate produced by the method as well as using the direct bonding method to provide an integrated semiconductor structure in which various CMOS devices are built upon a surface orientation that enhances device performance.
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