Invention Application
- Patent Title: Fin field effect transistors having capping insulation layers and methods for forming the same
- Patent Title (中): 具有封盖绝缘层的鳍式场效应晶体管及其形成方法
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Application No.: US10936033Application Date: 2004-09-08
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Publication No.: US20050093082A1Publication Date: 2005-05-05
- Inventor: Yong-Hoon Son , Si-Young Choi , Byeong-Chan Lee , Deok-Hyung Lee , In-Soo Jung
- Applicant: Yong-Hoon Son , Si-Young Choi , Byeong-Chan Lee , Deok-Hyung Lee , In-Soo Jung
- Priority: KR10-2003-76960 20031031
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/12 ; H01L29/786 ; H01L29/76
Abstract:
A field effect transistor includes a vertical fin-shaped semiconductor active region having an upper surface and a pair of opposing sidewalls on a substrate, and an insulated gate electrode on the upper surface and opposing sidewalls of the fin-shaped active region. The insulated gate electrode includes a capping gate insulation layer having a thickness sufficient to preclude formation of an inversion-layer channel along the upper surface of the fin-shaped active region when the transistor is disposed in a forward on-state mode of operation. Related fabrication methods are also discussed.
Public/Granted literature
- US07071048B2 Methods of fabricating fin field effect transistors having capping insulation layers Public/Granted day:2006-07-04
Information query
IPC分类:
