- 专利标题: Content addressable memory cell
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申请号: US10943701申请日: 2004-09-17
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公开(公告)号: US20050094477A1公开(公告)日: 2005-05-05
- 发明人: Joel Hatsch , Winfried Kamp , Thomas Kunemund , Holger Sedlak , Heinz Soldner
- 申请人: Joel Hatsch , Winfried Kamp , Thomas Kunemund , Holger Sedlak , Heinz Soldner
- 优先权: DEDE10211957.0 20020318
- 主分类号: G11C15/04
- IPC分类号: G11C15/04 ; G11C8/02
摘要:
One embodiment provides a content addressable memory cell having a first memory cell which is electrically connected to a comparator unit. The comparator unit is constructed from at least eight transistors, at least four transistors being arranged in a first circuit part and at least four transistors being arranged in a second circuit part and each of the circuit parts having at least two circuit branches.
公开/授权文献
- US06977831B2 Content addressable memory cell 公开/授权日:2005-12-20
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