发明申请
- 专利标题： Thin-film semiconductor device, manufacturing method of the same and image display apparatus
- 专利标题（中）： 薄膜半导体器件及其制造方法以及图像显示装置
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申请号： US11004858申请日： 2004-12-07
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公开(公告)号： US20050095822A1公开(公告)日： 2005-05-05
- 发明人: Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
- 申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
- 优先权： JP2002-192852 20020702
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/04 ; H01L29/786 ; H01L29/10 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; C30B1/00 ; H01L21/36
摘要：
A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
公开/授权文献
- US07084020B2 Manufacturing method of a thin-film semiconductor device 公开/授权日：2006-08-01
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