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    Thin film semiconductor device, production process and information displays
    2.
    发明授权
    Thin film semiconductor device, production process and information displays 有权
    薄膜半导体器件，生产工艺和信息显示

    公开(公告)号：US07569439B2

    公开(公告)日：2009-08-04

    申请号：US11047620

    申请日：2005-02-02

    申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

    发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/36

    CPC分类号： H01L21/02686 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678

    摘要： A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

    摘要翻译： 薄膜半导体器件具有膜厚度为200nm以下的半导体薄膜。 半导体薄膜形成在电介质基板上，其翘曲点为600℃以下。 半导体薄膜具有以下形式交替地配置缺陷密度为1×10 17 cm -3以下的第一半导体薄膜区域和缺陷密度为1×10 17 cm -3以上的第二半导体薄膜区域， 的条纹。 第一半导体薄膜区域的宽度大于半导体薄膜区域的宽度。 控制电介质基板上晶界的晶界，晶粒尺寸和取向，从而获得高品质的薄膜半导体器件。

    Wiring Board and Method for manufacturing the Same
    3.
    发明申请
    Wiring Board and Method for manufacturing the Same 失效
    接线板及其制造方法

    公开(公告)号：US20090114958A1

    公开(公告)日：2009-05-07

    申请号：US12264936

    申请日：2008-11-05

    申请人： Norio Nakazato ,  Nobuo Fujieda ,  Masayoshi Ishibashi ,  Midori Kato ,  Tadashi Arai ,  Takeo Shiba

    发明人： Norio Nakazato ,  Nobuo Fujieda ,  Masayoshi Ishibashi ,  Midori Kato ,  Tadashi Arai ,  Takeo Shiba

    IPC分类号： H01L29/78 ,  H01L21/311

    CPC分类号： H01L21/4867 ,  H01L23/49838 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H05K3/107 ,  H05K3/1258 ,  H05K2201/09036 ,  H05K2201/09254 ,  H01L2924/00

    摘要： A wiring board with an electronic device comprising a plurality of trenches arranged in parallel on a substrate, a common trench communicating the plurality of trenches with each other at one of their ends on the substrate, a metal layer formed at the bottom of the plurality of trenches, and an electrode layer connected with the metal layer and formed on a bottom of the common trench, wherein the electrode layer on the bottom of the common trench constitutes a source electrode or a drain electrode of a field effect transistor, whereby the wiring board and an electronic circuit having a good fine wire pattern and a good narrow gap between the patterns using a coating material can be formed, and a reduction for a cost of an organic thin film electronic device and the electronic circuit can be attained since they can be realized through a development of a printing technique.

    摘要翻译： 一种具有电子装置的布线板，包括平行布置在基板上的多个沟槽，在所述基板的一端的一端将所述多个沟槽彼此连通的公共沟槽，形成在所述多个栅极的底部的金属层 沟槽，和与金属层连接并形成在公共沟槽的底部上的电极层，其中公共沟槽的底部上的电极层构成场效应晶体管的源电极或漏电极，由此布线板 并且可以形成具有良好细线图案和使用涂料的图案之间良好窄间隙的电子电路，并且可以实现有机薄膜电子器件和电子电路的成本降低，因为它们可以是 通过开发印刷技术实现。

    Thin-film transistor device and a method for manufacturing the same
    5.
    发明申请
    Thin-film transistor device and a method for manufacturing the same 有权
    薄膜晶体管器件及其制造方法

    公开(公告)号：US20090001361A1

    公开(公告)日：2009-01-01

    申请号：US12155801

    申请日：2008-06-10

    申请人： Takeo Shiba ,  Tomihiro Hashizume ,  Yuji Suwa ,  Tadashi Arai

    发明人： Takeo Shiba ,  Tomihiro Hashizume ,  Yuji Suwa ,  Tadashi Arai

    IPC分类号： H01L51/00 ,  H01L51/40

    CPC分类号： H01L51/0012 ,  H01L27/283 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

    摘要： The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film 7 is formed on an interface between a gate insulator and a semiconductor, and also a second polarizable thin film 8 provided on an interface between source and drain electrodes 5 and a semiconductor film 9. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films in the area.

    摘要翻译： 本发明提供一种制造薄膜晶体管器件的方法。 该方法能够提高并入薄型和轻型图像显示装置或柔性电子装置中的互补TFT电路的性能，并且还能够降低功耗并降低电路的制造成本。 此外，在该方法中，制造步骤的数量减少，从而通过印刷技术促进了薄膜晶体管器件的大规模生产和尺寸增长。 在这种方法中，通过溶液处理和/或可印刷的方法，形成n型和p型TFT的电极和有机半导体由两种类型的TFT由相同的材料制成。 第一可极化薄膜7形成在栅极绝缘体和半导体之间的界面上，以及设置在源电极和漏电极5与半导体膜9之间的界面上的第二可极化薄膜8.互补薄膜晶体管 通过将n型TFT区域或p型TFT区域选择性地暴露于光以从该区域中的第一和第二可极化薄膜去除偏振功能来制造器件。

    Method for Exposing Photo-Sensitive SAM Film and Method for Manufacturing Semiconductor Device
    6.
    发明申请
    Method for Exposing Photo-Sensitive SAM Film and Method for Manufacturing Semiconductor Device 有权
    曝光光敏SAM膜的方法及制造半导体器件的方法

    公开(公告)号：US20080268582A1

    公开(公告)日：2008-10-30

    申请号：US12031783

    申请日：2008-02-15

    申请人： Tadashi Arai ,  Takeo Shiba ,  Masahiko Ando

    发明人： Tadashi Arai ,  Takeo Shiba ,  Masahiko Ando

    IPC分类号： H01L31/10 ,  H01L31/16 ,  H01L31/101 ,  C23C14/28

    CPC分类号： G03F7/165 ,  H01L51/0023 ,  H01L51/055 ,  H01L51/102 ,  Y10S977/896 ,  Y10S977/901

    摘要： A disclosed technology is a method for exposing a photo-sensitive SAM film, wherein a self-assembled-monolayer (photo-sensitive SAM film) having photo-sensitivity, exhibiting hydrophobicity before exposure, and exhibiting hydrophilicity after exposure is formed on a substrate, exposure is performed to the substrate in a state in which a surface of the substrate on which the film has been formed is dipped in liquid or in a state in which a light-sensitive surface of the substrate faces downward to be in contact with liquid, exposure light is ultraviolet light, visible light, or light with an exposure-wavelength of 350 nm or more to 800 nm or less, and the liquid is at least one of organic solvent containing an aromatic group and organic solvent of alcohols, ethers, or ketones.

    摘要翻译： 所公开的技术是曝光感光SAM膜的方法，其中在基板上形成具有光敏性，曝光前显示疏水性并且在曝光后显示亲水性的自组装单层（光敏SAM膜） 在其中已经形成有膜的基板的表面浸渍在液体中或者在基板的感光表面朝下的状态下与液体接触的状态下对基板进行曝光， 曝光光是紫外光，可见光或曝光波长为350nm以上至800nm以下的光，液体为含有芳香族基团的有机溶剂和醇，醚或有机溶剂的有机溶剂中的至少一种 酮类

    Method for fabricating image display device
    7.
    发明申请
    Method for fabricating image display device 有权
    图像显示装置的制造方法

    公开(公告)号：US20070134893A1

    公开(公告)日：2007-06-14

    申请号：US11702576

    申请日：2007-02-06

    申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

    发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02683 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

    摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

    摘要翻译： 提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。 形成在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR 1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光 光束被重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的分立的重整区域。 在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致 电影。