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    Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof
    1.
    发明授权
    Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof 有权
    含有多晶Si-Ge合金的薄膜半导体器件及其制造方法

    公开(公告)号：US06716726B2

    公开(公告)日：2004-04-06

    申请号：US10277140

    申请日：2002-10-22

    申请人： Shinya Yamaguchi ,  Takeo Shiba ,  Mutsuko Hatano ,  Seong-Kee Park

    发明人： Shinya Yamaguchi ,  Takeo Shiba ,  Mutsuko Hatano ,  Seong-Kee Park

    IPC分类号： H01L2120

    CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78684 ,  Y10S438/933

    摘要： The present invention relates to a thin film transistor, in a low-temperature poly-Si thin film becoming an elemental material of the thin film transistor, an object of the invention is to provide the thin film transistor suitable for realizing an image display device having a high performance and a large area at low cost by realizing a poly-crystalline thin film having a crystal structure restraining current scattering in a grain boundary, lessening surface roughness, and capable of realizing high mobility even to a positive hole current. The object described above is achieved by realizing a TFT with high mobility by restraining a current scattering factor in a grain boundary of crystal with an introduction of Ge into the poly-crystalline Si thin film and with a difference in ratios of Ge compositions between an interior grain of crystal and a grain boundary of crystal resulted from a phase separation involved in crystallization, and by restraining surface roughness using a difference in volumes in a crystal.

    摘要翻译： 薄膜晶体管本发明涉及一种成为薄膜晶体管的元素材料的低温多晶硅薄膜中的薄膜晶体管，其目的在于提供一种薄膜晶体管，其适用于实现具有 通过实现具有抑制晶界中的电流散射的晶体结构的多晶薄膜，降低表面粗糙度，并且即使对于空穴电流也能实现高迁移率，因此具有高性能和大面积的低成本。目的描述 通过在晶体的晶界中抑制电流散射因子，通过在多晶Si薄膜中引入Ge并且在晶体的内部晶粒之间的Ge组成的比率的差异来实现具有高迁移率的TFT， 并且晶体的晶界由结晶涉及的相分离产生，并且通过使用差异来抑制表面粗糙度 在一个水晶体积。

    Thin film transistor
    3.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US06501095B2

    公开(公告)日：2002-12-31

    申请号：US09791827

    申请日：2001-02-26

    申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Takeo Shiba ,  Yoshinobu Kimura ,  Seong-Kee Park

    发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Takeo Shiba ,  Yoshinobu Kimura ,  Seong-Kee Park

    IPC分类号： H01L2904

    CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

    摘要： The present invention relates to a thin film transistor device, an object of the invention is to realize the thin film transistor device of high mobility by large-grain sizing (quasi single crystal) a low-temperature poly-Si thin film being an elemental material of the thin film transistor in a state trued up to a crystal orientation having the most stable lattice structure in consideration of strain at the interface with a substrate, and by controlling a crystal position. The object described above can be achieved by realizing a high mobility thin film transistor device in a manner forming a channel with crystal grains having large grain size and controlled crystal orientations by paying attention to a fact that a {110} surface of IV group crystal (crystal composed of either one or a mixed crystal of them selected from a group of C, Si, Ge, Sn, and Pb) has the smallest dangling bond density, by minimizing strain energy at the substrate interface, and by making crystal growth with selection of crystal orientations having growth lengths equivalent to channel lengths.

    摘要翻译： 本发明涉及一种薄膜晶体管器件，其目的是通过大晶粒尺寸（准单晶）实现高迁移率的薄膜晶体管器件，作为元素材料的低温多晶硅薄膜 考虑到与衬底的界面处的应变，并且通过控制晶体位置，在处于具有最稳定的晶格结构的晶体取向的状态下的薄膜晶体管。通过实现高移动性可以实现上述目的 薄膜晶体管器件以通过注意以下事实来形成具有大晶粒尺寸和晶体取向晶体的沟道的方式：注意以下事实：IV族晶体的{110}表面（由它们中的一种或其混晶构成的晶体被选择 通过使基板界面处的应变能最小化，并且通过选择使晶体生长，从C，Si，Ge，Sn和Pb组中获得最小的悬空键密度 具有等同于通道长度的生长长度的晶体取向。