- 专利标题： Method for fabricating semiconductor integrated circuit device
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申请号： US10959972申请日： 2004-10-08
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公开(公告)号： US20050095832A1公开(公告)日： 2005-05-05
- 发明人: Hiroyuki Yamauchi
- 申请人： Hiroyuki Yamauchi
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2001-355580 20011121
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/28 ; H01L21/3205 ; H01L21/66 ; H01L21/768 ; H01L21/822 ; H01L21/8234 ; H01L27/04 ; H01L27/088 ; H01L21/76 ; H01L21/4763
摘要：
A method for fabricating a semiconductor integrated circuit device of the present invention forms an insulating film on a semiconductor wafer and forms a mask pattern containing a functional element or a wire on the formed insulating film. Dimensions of the mask pattern are changed in accordance with an amount of process variation occurring in the thickness or dielectric constant of the insulating film during the formation of the insulating film.