发明申请
- 专利标题: Surface-emitting type semiconductor laser and method for manufacturing the same
- 专利标题(中): 表面发射型半导体激光器及其制造方法
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申请号: US10940984申请日: 2004-09-15
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公开(公告)号: US20050100070A1公开(公告)日: 2005-05-12
- 发明人: Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
- 申请人: Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
- 申请人地址: JP Tokyo
- 专利权人: SEIKO EPSON CORPORATION
- 当前专利权人: SEIKO EPSON CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2003-326296 20030918
- 主分类号: H01S5/183
- IPC分类号: H01S5/183 ; H01S5/42 ; H01S5/00
摘要:
To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.
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