Invention Application
US20050106313A1 METHOD FOR FABRICATING DC SQUID USING HIGH-TC SUPERCONDUCTING INTRINSIC JOSEPHSON JUNCTIONS
失效
使用高TC超导内置JOSEPHSON JUNCTIONS制造直流电源的方法
- Patent Title: METHOD FOR FABRICATING DC SQUID USING HIGH-TC SUPERCONDUCTING INTRINSIC JOSEPHSON JUNCTIONS
- Patent Title (中): 使用高TC超导内置JOSEPHSON JUNCTIONS制造直流电源的方法
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Application No.: US10434224Application Date: 2003-05-09
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Publication No.: US20050106313A1Publication Date: 2005-05-19
- Inventor: Hu-Jong Lee , Young-Wook Son , Jong-Hoon Bae , Myung-Ho Bae
- Applicant: Hu-Jong Lee , Young-Wook Son , Jong-Hoon Bae , Myung-Ho Bae
- Priority: KR10-2003-09015 20030213
- Main IPC: H01L39/22
- IPC: H01L39/22 ; G01R33/035 ; H01L39/24 ; H01L21/00 ; B05D5/12 ; H01L29/06 ; H01L29/08
Abstract:
A DC superconducting interference device (SQUID) utilizes intrinsic Josephson tunnel junctions formed naturally in stacks of high-Tc superconducting single crystals, where the double-side cleaving technique is used to define a ring-shaped high-Tc superconducting structure with two stacks of intrinsic Josephson junctions inserted in the ring.
Public/Granted literature
- US06908771B2 Method for fabricating dc SQUID using high-Tc superconducting intrinsic Josephson junctions Public/Granted day:2005-06-21
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