- 专利标题： Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
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申请号： US10958627申请日： 2004-10-05
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公开(公告)号： US20050106821A1公开(公告)日： 2005-05-19
- 发明人: John Snyder , John Larson
- 申请人： John Snyder , John Larson
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8234 ; H01L27/095 ; H01L29/10 ; H01L29/417 ; H01L29/47 ; H01L29/51 ; H01L29/78 ; H01L31/0328
摘要：
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.
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