发明申请
- 专利标题： Method of manufacturing flash memory device
- 专利标题（中）： 制造闪存设备的方法
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申请号： US10745008申请日： 2003-12-23
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公开(公告)号： US20050106822A1公开(公告)日： 2005-05-19
- 发明人: Seung Lee , Sang Park
- 申请人： Seung Lee , Sang Park
- 优先权： KR2003-81960 20031119
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/336 ; H01L21/8234 ; H01L21/8247 ; H01L27/08 ; H01L27/088 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
Disclosed is a method of manufacturing a flash memory device. In a flash memory device using a SA-STI scheme, a trench for isolation is buried with oxide. A field oxide film is then formed by means of a polishing process. Next, field oxide films of a cell region and a low-voltage transistor region are selectively etched by a given thickness. As EFH values of the cell region, the low-voltage transistor region and the high-voltage transistor region become same or similar, it is possible to secure stability of a subsequent process.
公开/授权文献
- US07211484B2 Method of manufacturing flash memory device 公开/授权日：2007-05-01