发明申请
- 专利标题： Silicon nitride film and semiconductor device, and manufacturing method thereof
- 专利标题（中）： 氮化硅膜和半导体器件及其制造方法
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申请号： US11017870申请日： 2004-12-22
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公开(公告)号： US20050106898A1公开(公告)日： 2005-05-19
- 发明人: Toru Takayama , Shunpei Yamazaki , Kengo Akimoto
- 申请人： Toru Takayama , Shunpei Yamazaki , Kengo Akimoto
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP2002-143899 20020517; JP2002-160848 20020531
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/318 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/13 ; H01L29/423 ; H01L29/49
摘要：
An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.
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