公开(公告)号：US20050106898A1

公开(公告)日：2005-05-19

申请号：US11017870

申请日：2004-12-22

申请人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L29/49

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成通道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×10 21 / cm 3以下的氢，并且具有相对于含有一种或多种的混合溶液的蚀刻速率为10nm / min或更小的特性 氟化氢铵（NH 4 HF 2 H 2）为7.13％，氟化铵（NH 4 N 4 F）为15.4％。

公开(公告)号：US08970106B2

公开(公告)日：2015-03-03

申请号：US13360838

申请日：2012-01-30

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

公开(公告)号：US07492090B2

公开(公告)日：2009-02-17

申请号：US10937904

申请日：2004-09-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01J63/04 ,  H01J1/62 ,  H05B33/04

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

公开(公告)号：US20090042326A1

公开(公告)日：2009-02-12

申请号：US12239248

申请日：2008-09-26

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Naoya Sakamoto ,  Kengo Akimoto ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01L33/00

CPC分类号： H01L51/5206 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3281 ,  H01L27/3295 ,  H01L51/5215 ,  Y10S428/917

摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

摘要翻译： 根据本发明的一个方面，在注入孔（空穴注入电极，阳极）的一侧，代替传统的导电透明氧化物，涂覆含有硅或氧化硅的导电透明氧化物层的叠层结构作为电极 层如ITO。 此外，根据本发明的另一方面，作为空穴注入电极，施加含有硅或氧化硅的导电性透明氧化物层（其含量不同）的叠层结构。 优选地，在与TFT连接的一侧上的导电层的硅或氧化硅浓度范围为1原子％至6原子％，并且在含有机化合物的层侧的硅或氧化硅浓度范围为 7原子％至15原子％。

公开(公告)号：US20060261341A1

公开(公告)日：2006-11-23

申请号：US11492996

申请日：2006-07-26

申请人： Kengo Akimoto ,  Toru Takayama ,  Tetsuji Yamaguchi ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Toru Takayama ,  Tetsuji Yamaguchi ,  Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L21/3185 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/31612 ,  H01L21/67109 ,  H01L21/67248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high reliability using the technique. In the present invention a silicon oxide film is formed on a crystalline semiconductor film, which is formed on an insulating surface, by the sputtering method using silicon as a target by applying high-frequency power in an atmosphere containing oxygen or oxygen and a rare gas, a silicon nitride film is formed thereon by applying high-frequency power in an atmosphere containing nitrogen or nitrogen and a rare gas, and then, heat treatment of a stacked body of the crystalline semiconductor film, the silicon oxide film, and the silicon nitride film at a temperature higher than a temperature for forming the films is performed.

摘要翻译： 本发明的目的是提供一种用于形成质量好的致密绝缘膜的技术，该技术可应用于能够实现高性能和高性能的诸如玻璃和半导体器件之类的耐热弱的基板上制成的晶体管 使用该技术的可靠性。 在本发明中，通过在含有氧或氧的气氛中施加高频电力的稀有气体，通过使用硅作为靶的溅射法，在形成在绝缘表面上的结晶半导体膜上形成氧化硅膜 通过在含氮或氮气和稀有气体的气氛中施加高频功率而形成氮化硅膜，然后对结晶半导体膜，氧化硅膜和氮化硅的层叠体进行热处理 在高于用于形成膜的温度的温度下进行膜。

公开(公告)号：US07052943B2

公开(公告)日：2006-05-30

申请号：US10097641

申请日：2002-03-15

申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Kengo Akimoto

发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L27/1277

摘要： A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film (104) having a crystal structure is formed on a substrate. A barrier layer (105) and a second semiconductor film (106) containing a rare gas element are formed on the first semiconductor film (104). A metal element contained in the first semiconductor film (104) is moved to the second semiconductor film (106) through the barrier layer (105) by heat treatment for gettering.

摘要翻译： 提供一种使用具有对半导体膜的结晶的催化作用以获得结晶半导体膜然后有效地除去残留在膜中的金属元素的金属元素的技术。 在基板上形成具有晶体结构的第一半导体膜（104）。 在第一半导体膜（104）上形成有阻挡层（105）和含有稀有气体元素的第二半导体膜（106）。 包含在第一半导体膜（104）中的金属元素通过阻挡层（105）通过热处理移动到第二半导体膜（106）以进行吸气。

公开(公告)号：US20050197030A1

公开(公告)日：2005-09-08

申请号：US11028478

申请日：2005-01-04

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Kengo Akimoto ,  Hajime Tokunaga

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Kengo Akimoto ,  Hajime Tokunaga

IPC分类号： H01J9/00 ,  H01J9/24

CPC分类号： H01L27/3244 ,  H01L51/5206 ,  H01L51/525 ,  H01L51/529

摘要： It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode including a conductive material added with a material which prevents crystallization; forming a layer containing an organic compound over the first electrode by heating the first electrode under a reduced pressure at temperatures of 350° C. or higher; and forming a second electrode over the layer containing an organic compound. It is preferable to perform the heat treatment at temperatures of 350° C. or higher, preferably, 375° C. or higher for 12 hours or longer. When the first electrode is formed by using indium tin oxide containing silicon oxide, a highly display device can be manufactured.

摘要翻译： 本发明的目的是提供一种制造具有优选产率的高可靠性显示装置的方法。 根据本发明的显示装置的制造方法包括以下步骤：形成包括添加有防止结晶的材料的导电材料的第一电极; 通过在350℃或更高的温度下在减压下加热第一电极，在第一电极上形成含有有机化合物的层; 以及在包含有机化合物的层上形成第二电极。 优选在350℃以上的温度下进行热处理，优选在375℃以上进行12小时以上的热处理。 当通过使用含有氧化硅的氧化铟锡形成第一电极时，可以制造高度显示装置。

公开(公告)号：US06838397B2

公开(公告)日：2005-01-04

申请号：US10439295

申请日：2003-05-16

申请人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L29/49 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulation film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的一个目的是将适合用作栅极绝缘膜和保护膜的固化和高品质的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成通道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×10 21 / cm 3以下的氢，相对于含有氟化氢铵（NH 4 HF 2）为7.13％的混合溶液，蚀刻速率为10nm /分钟以下的特性， 15.4％的氟化铵（NH4F）。

公开(公告)号：US07825021B2

公开(公告)日：2010-11-02

申请号：US11028478

申请日：2005-01-04

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Kengo Akimoto ,  Hajime Tokunaga

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Kengo Akimoto ,  Hajime Tokunaga

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L27/3244 ,  H01L51/5206 ,  H01L51/525 ,  H01L51/529

摘要： It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode including a conductive material added with a material which prevents crystallization; forming a layer containing an organic compound over the first electrode by heating the first electrode under a reduced pressure at temperatures of 350° C. or higher; and forming a second electrode over the layer containing an organic compound. It is preferable to perform the heat treatment at temperatures of 350° C. or higher, preferably, 375° C. or higher for 12 hours or longer. When the first electrode is formed by using indium tin oxide containing silicon oxide, a highly display device can be manufactured.

摘要翻译： 本发明的目的是提供一种制造具有优选产率的高可靠性显示装置的方法。 根据本发明的显示装置的制造方法包括以下步骤：形成包括添加有防止结晶的材料的导电材料的第一电极; 通过在350℃或更高的温度下在减压下加热第一电极，在第一电极上形成含有有机化合物的层; 以及在包含有机化合物的层上形成第二电极。 优选在350℃以上的温度下进行热处理，优选在375℃以上进行12小时以上的热处理。 当通过使用含有氧化硅的氧化铟锡形成第一电极时，可以制造高度显示装置。

公开(公告)号：US08866144B2

公开(公告)日：2014-10-21

申请号：US12983538

申请日：2011-01-03

申请人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L23/48 ,  H01L23/52 ,  H01L29/66 ,  H01L29/49 ,  H01L27/12 ,  H01L29/423 ,  B32B17/06 ,  C23C14/06 ,  B32B17/04 ,  H01L21/318 ,  H01L21/314 ,  C23C14/58 ,  H01L27/13

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成沟道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×1021 / cm3以下的氢，相对于含有7.13％的氟化氢铵（NH4HF2）和氟化铵（NH4HF2）的混合溶液，蚀刻速率为10nm /分钟以下的特性 NH4F）为15.4％。