A surface-emitting semiconductor laser includes a first reflection layer formed on a substrate; an active layer formed on the first reflection layer; a second reflection layer formed on the active region; an electrode that has an aperture that defines a light emission range and is provided on the second reflection layer so that an uppermost layer of the second reflection layer is exposed through the aperture; and a third reflection layer that is provided on the electrode so as to cover the aperture. The third reflection layer includes a conductive film that electrically contacts the uppermost layer of the second reflection layer.