发明申请
- 专利标题： Ultra shallow junction formation
- 专利标题（中）： 超浅结结形成
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申请号： US10816776申请日： 2004-04-02
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公开(公告)号： US20050112830A1公开(公告)日： 2005-05-26
- 发明人: Amitabh Jain , Lance Robertson
- 申请人： Amitabh Jain , Lance Robertson
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/324 ; H01L21/336
摘要：
The invention describes a method for forming ultra shallow junction formation. Dopant species are implanted into a semiconductor. Solid phase epitaxy anneals and subsequent ultra high temperature anneals are performed following the implantation processes.
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