发明申请
- 专利标题： Minimizing degradation of SiC bipolar semiconductor devices
- 专利标题（中）： 最小化SiC双极半导体器件的退化
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申请号： US11022520申请日： 2004-12-22
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公开(公告)号： US20050116234A1公开(公告)日： 2005-06-02
- 发明人: Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
- 申请人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/732 ; H01L29/744 ; H01L29/861 ; H01L29/15
摘要：
A bipolar device has at least one p−type layer of single crystal silicon carbide and at least one n−type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
公开/授权文献
- US07880171B2 Minimizing degradation of SiC bipolar semiconductor devices 公开/授权日：2011-02-01
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