发明申请
- 专利标题： Semiconductor diode and production method suitable therefor
- 专利标题（中）： 半导体二极管及其适用的生产方法
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申请号： US10971572申请日： 2004-10-22
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公开(公告)号： US20050116249A1公开(公告)日： 2005-06-02
- 发明人: Anton Mauder , Frank Hille , Vytla Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
- 申请人： Anton Mauder , Frank Hille , Vytla Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
- 申请人地址： DE Munchen
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munchen
- 优先权： DE10349582.7 20031024
- 主分类号： H01L21/329
- IPC分类号： H01L21/329 ; H01L29/32 ; H01L29/861 ; H01L21/00
摘要：
A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).
公开/授权文献
- US07511353B2 Semiconductor diode and production method suitable therefor 公开/授权日：2009-03-31
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