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公开(公告)号：US08647968B2
公开(公告)日：2014-02-11
申请号：US12482101
申请日：2009-06-10
IPC分类号： H01L21/20
CPC分类号： H01L29/04 , C30B25/18 , C30B29/06 , C30B33/02 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01L21/263 , H01L21/3225 , H01L29/0657
摘要： A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.
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公开(公告)号：US08415219B2
公开(公告)日：2013-04-09
申请号：US11638612
申请日：2006-12-13
申请人： Franz Hirler , Helmut Strack
发明人： Franz Hirler , Helmut Strack
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0847 , H01L29/086 , H01L29/1604 , H01L29/165 , H01L29/41766 , H01L29/7813
摘要： To attain a comparatively high breakdown voltage at a high avalanche strength and with the physical size simultaneously being as small as possible, the invention proposes constructing a transistor device in a semiconductor material region in which a first source/drain region is used as a source region and in which the source region has a comparatively reduced surface charge or surface charge density.
摘要翻译： 为了在高雪崩强度下获得相当高的击穿电压并且物理尺寸同时尽可能小，本发明提出在其中使用第一源极/漏极区域作为源极区域的半导体材料区域中构造晶体管器件 并且其中源区具有相对减小的表面电荷或表面电荷密度。
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公开(公告)号：US08288258B2
公开(公告)日：2012-10-16
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/306
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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4.发明授权Power semiconductor component with charge compensation structure and method for the fabrication thereof 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US08263450B2
公开(公告)日：2012-09-11
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/00
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。
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公开(公告)号：US20110079882A1
公开(公告)日：2011-04-07
申请号：US12967866
申请日：2010-12-14
IPC分类号： H01L29/30
CPC分类号： H01L21/3225 , H01L21/263 , H01L21/324 , H03H9/175 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译： 晶片包括晶片前端和与器件表面相邻的区域，其中该区域包括空位 - 氧络合物，并且晶片前端包括预定的表面结构以在其上形成具有所需性质的器件。
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6.发明申请METHOD FOR TREATING AN OXYGEN-CONTAINING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COMPONENT 审中-公开用于处理含氧半导体波长的方法和半导体元件公开(公告)号：US20110042791A1
公开(公告)日：2011-02-24
申请号：US12161472
申请日：2007-01-19
IPC分类号： H01L29/08 , H01L21/26 , H01L21/322
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3221 , H01L21/3225 , H01L29/0873 , H01L29/0878 , H01L29/32 , H01L29/66704 , H01L29/66727 , H01L29/861
摘要： A method for treating an oxygen-containing semiconductor wafer, and semiconductor component. One embodiment provides a first side, a second side opposite the first side. A first semiconductor region adjoins the first side. A second semiconductor region adjoins the second side. The second side of the wafer is irridated such that lattice vacancies arise in the second semiconductor region. A first thermal process is carried out the duration of which is chosen such that oxygen agglomerates form in the second semiconductor region and that lattice vacancies diffuse from the first semiconductor region into the second semiconductor region.
摘要翻译： 一种处理含氧半导体晶片和半导体元件的方法。 一个实施例提供了第一侧，与第一侧相对的第二侧。 第一半导体区域邻接第一侧。 第二半导体区域邻接第二侧。 搅拌晶片的第二面使得在第二半导体区域中出现晶格空位。 进行第一热处理，其持续时间被选择为使得在第二半导体区域中形成氧团聚体，并且晶格空位从第一半导体区扩散到第二半导体区域。
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公开(公告)号：US20100264523A1
公开(公告)日：2010-10-21
申请号：US12828327
申请日：2010-07-01
申请人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
发明人： Adolf Koller , Horst Theuss , Ralf Otremba , Josef Hoeglauer , Helmut Strack , Reinhard Ploss
IPC分类号： H01L23/552 , H01L23/485
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/97 , H01L2224/05001 , H01L2224/05022 , H01L2224/05147 , H01L2224/05572 , H01L2224/05647 , H01L2224/16225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/92244 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/19107 , H01L2924/3025 , H01L2224/82 , H01L2924/00 , H01L2224/45099
摘要： A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components.
摘要翻译： 面板具有具有上部第一金属层和多个垂直半导体部件的基板。 每种情况下的垂直半导体部件具有第一侧，其具有第一负载电极和控制电极，而第二侧具有第二负载电极。 半导体部件的第二面分别安装在基板的金属层上。 半导体部件被配置成使得相邻的半导体部件的边缘彼此分离。 第二金属层布置在半导体部件之间的分离区域中。
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8.发明申请Capacitor Structure in Trench Structures of Semiconductor Devices and Semiconductor Devices Comprising Capacitor Structures of this Type and Methods for Fabricating the Same 有权包括这种类型的电容器结构的半导体器件和半导体器件的沟槽结构中的电容器结构及其制造方法公开(公告)号：US20100264456A1
公开(公告)日：2010-10-21
申请号：US12827035
申请日：2010-06-30
CPC分类号： H01L29/66181 , H01L27/10861 , H01L28/82
摘要： A capacitor structure in trench structures of a semiconductor device includes conductive regions made of metallic and/or semiconducting materials. The conducting regions are surrounded by a dielectric and form stacked layers in the trench structure of the semiconductor device.
摘要翻译： 半导体器件的沟槽结构中的电容器结构包括由金属和/或半导体材料制成的导电区域。 导电区域被电介质包围，并在半导体器件的沟槽结构中形成叠层。
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公开(公告)号：US07538412B2
公开(公告)日：2009-05-26
申请号：US11480150
申请日：2006-06-30
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack , Carsten Schaeffer , Frank Pfirsch
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack , Carsten Schaeffer , Frank Pfirsch
IPC分类号： H01L27/082
CPC分类号： H01L29/861 , H01L29/7396
摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.
摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。
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公开(公告)号：US20090087631A1
公开(公告)日：2009-04-02
申请号：US11864483
申请日：2007-09-28
CPC分类号： H01L21/3225 , H01L21/263 , H01L21/324 , H03H9/175 , Y10T428/2495 , Y10T428/26
摘要： A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.
摘要翻译： 晶片包括晶片前端和与器件表面相邻的区域，其中该区域包括空位 - 氧络合物，并且晶片前端包括预定的表面结构以在其上形成具有所需性质的器件。
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