发明申请
US20050116254A1 Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
有权
横向异质结双极晶体管和使用选择性外延生长的制造方法
- 专利标题： Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
- 专利标题（中）： 横向异质结双极晶体管和使用选择性外延生长的制造方法
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申请号： US10725670申请日： 2003-12-01
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公开(公告)号： US20050116254A1公开(公告)日： 2005-06-02
- 发明人: Purakh Verma , Shao-Fu Chu , Lap Chan , Jia Zheng , Jian Li
- 申请人： Purakh Verma , Shao-Fu Chu , Lap Chan , Jia Zheng , Jian Li
- 申请人地址： SG Singapore
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/737 ; H01L21/338 ; H01L21/8222 ; H01L29/732 ; H01L29/739 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
摘要：
A method for manufacturing a heterojunction bipolar transistor is provided. An intrinsic collector structure is formed on a substrate. An extrinsic base structure partially overlaps the intrinsic collector structure. An intrinsic base structure is formed adjacent the intrinsic collector structure and under the extrinsic base structure. An emitter structure is formed adjacent the intrinsic base structure. An extrinsic collector structure is formed adjacent the intrinsic collector structure. A plurality of contacts is formed through an interlevel dielectric layer to the extrinsic collector structure, the extrinsic base structure, and the emitter structure.
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