发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10968354申请日： 2004-10-20
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公开(公告)号： US20050116283A1公开(公告)日： 2005-06-02
- 发明人: Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
- 申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
- 申请人地址： JP Moriguchi-city JP Anpachi-gun
- 专利权人： Sanyo Electric Co., Ltd.,Gifu SANYO Electronics Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.,Gifu SANYO Electronics Co., Ltd.
- 当前专利权人地址： JP Moriguchi-city JP Anpachi-gun
- 优先权： JP2003-401466 20031201
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/76 ; H01L29/78 ; H01L29/80
摘要：
In conventional semiconductor devices, there observed a problem that cells on the devices may not function uniformly because of voltage drop in a main wiring layer due to a uniform and narrow width of the main wiring layer through which a main current flows. In a semiconductor device of the present invention, a width of one end of a main wire for carrying the main current is formed wider than a width of another end of the main wire. An overall width of the main wire is formed so as to be gradually narrowed from the one end to the another end. In this way, it is possible to reduce a difference in drive voltages between a cell located in the vicinity of an electrode pad for carrying the main current and a cell located in a remote position. Resultantly, it is possible to suppress a voltage drop in the main wire and to achieve uniform operations of cells in an element.