发明申请
US20050116360A1 Complementary field-effect transistors and methods of manufacture
审中-公开
互补场效应晶体管及其制造方法
- 专利标题： Complementary field-effect transistors and methods of manufacture
- 专利标题（中）： 互补场效应晶体管及其制造方法
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申请号： US10896270申请日： 2004-07-21
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公开(公告)号： US20050116360A1公开(公告)日： 2005-06-02
- 发明人: Chien-Chao Huang , Fu-Liang Yang , Mickey Ken , Chenming Hu , Chung-Hu Ge , Wen-Chin Lee , Chih-Hsin Ko
- 申请人： Chien-Chao Huang , Fu-Liang Yang , Mickey Ken , Chenming Hu , Chung-Hu Ge , Wen-Chin Lee , Chih-Hsin Ko
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/76 ; H01L21/8238 ; H01L27/092 ; H01L29/78 ; H01L31/0328
摘要：
A complementary FET and a method of manufacture is provided. The complementary FET utilizes a substrate having a surface layer with a crystal orientation. Tensile stress, which increases performance of the NMOS FETs, is added by silicided source/drain regions, tensile-stress film, shallow trench isolations, inter-layer dielectric, or the like.
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