发明申请
- 专利标题： Vertical cavity surface emitting laser diode and method for manufacturing the same
- 专利标题（中）： 垂直腔表面发射激光二极管及其制造方法
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申请号： US10978346申请日： 2004-11-02
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公开(公告)号： US20050121678A1公开(公告)日： 2005-06-09
- 发明人: Mizunori Ezaki , Michihiko Nishigaki , Keiji Takaoka
- 申请人： Mizunori Ezaki , Michihiko Nishigaki , Keiji Takaoka
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2003-377246 20031106
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/3205 ; H01L27/15 ; H01L29/26 ; H01L31/12 ; H01S5/183 ; H01S5/32 ; H01L33/00
摘要：
In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high concentration portion in the mesa, so that polarization controllability of a device can be improved.
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