Invention Application
US20050123232A1 Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure
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薄硅隔离器(SOI)结构中的平面波导光隔离器
- Patent Title: Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure
- Patent Title (中): 薄硅隔离器(SOI)结构中的平面波导光隔离器
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Application No.: US11005286Application Date: 2004-12-06
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Publication No.: US20050123232A1Publication Date: 2005-06-09
- Inventor: David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski , Harvey Wagner
- Applicant: David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski , Harvey Wagner
- Assignee: Sioptical, Inc.
- Current Assignee: Sioptical, Inc.
- Main IPC: G02B
- IPC: G02B20060101 ; G02B6/122 ; G02B6/125 ; G02B6/26 ; G02B6/42

Abstract:
A planar optical isolator is formed within the silicon surface layer of an SOI structure. A forward-directed signal is applied to an input waveguiding section of the isolator and thereafter propagates through a non-reciprocal waveguide coupling region into an output waveguide section. A rearward-directed signal enters via the output waveguide section and is thereafter coupled into the non-reciprocal waveguide structure, where the geometry of the structure functions to couple only a small amount of the reflected signal into the input waveguide section. In one embodiment, the non-reciprocal structure comprises an N-way directional coupler (with one output waveguide, one input waveguide and N-1 isolating waveguides). In another embodiment, the non-reciprocal structure comprises a waveguide expansion region including a tapered, mode-matching portion coupled to the output waveguide and an enlarged, non-mode matching portion coupled to the input waveguide such that a majority of a reflected signal will be mismatched with respect to the input waveguide section. By cascading a number of such planar SOI-based structures, increased isolation can be achieved—advantageously within a monolithic arrangement.
Public/Granted literature
- US07113676B2 Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure Public/Granted day:2006-09-26
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