发明申请
- 专利标题： Method of manufacturing a semiconductor device and a semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US11047660申请日： 2005-02-02
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公开(公告)号： US20050127535A1公开(公告)日： 2005-06-16
- 发明人: Noriyuki Takahashi , Masayuki Suzuki , Kouji Tsuchiya , Takao Matsuura , Takanori Hashizume , Masahiro Ichitani , Kazunari Suzuki , Takafumi Nishita , Kenichi Imura , Takashi Miwa
- 申请人： Noriyuki Takahashi , Masayuki Suzuki , Kouji Tsuchiya , Takao Matsuura , Takanori Hashizume , Masahiro Ichitani , Kazunari Suzuki , Takafumi Nishita , Kenichi Imura , Takashi Miwa
- 专利权人： Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.,Hitachi Yonezawa Electronics Co., Ltd.
- 当前专利权人： Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.,Hitachi Yonezawa Electronics Co., Ltd.
- 优先权： JP2000-387825 20001220
- 主分类号： B29C45/14
- IPC分类号： B29C45/14 ; H01L21/56 ; H01L23/00 ; H01L23/12 ; H01L23/31 ; H01L23/498 ; H01L23/28
摘要：
The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.
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