发明申请
US20050130066A1 Method of forming single sided conductor and semiconductor device having the same
审中-公开
形成单面导体的方法和具有该单面导体的半导体器件
- 专利标题： Method of forming single sided conductor and semiconductor device having the same
- 专利标题（中）： 形成单面导体的方法和具有该单面导体的半导体器件
-
申请号： US10731133申请日： 2003-12-10
-
公开(公告)号： US20050130066A1公开(公告)日： 2005-06-16
- 发明人: Chin-Te Kuo , Jeng Lin , Shian-Jyh Lin , Tsan Lu
- 申请人： Chin-Te Kuo , Jeng Lin , Shian-Jyh Lin , Tsan Lu
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; H01L21/32 ; H01L21/768 ; H01L21/8242
摘要：
A method of forming a single sided conductor and a semiconductor device having the same is provided. The method includes providing a substrate having an opening. The opening exposes a sidewall and an opening base surface. A tilted mask layer is formed in the opening. The tilted mask layer exposes the sidewall and a portion of the opening base surface. A dielectric layer is formed on the exposed sidewall and the exposed opening base surface. Then, the tilted mask layer is removed, and a conductive layer is formed over the substrate.
信息查询
