发明申请
- 专利标题: EMI-EMC shield for silicon-based optical transceiver
- 专利标题(中): 用于硅基光收发器的EMI-EMC屏蔽
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申请号: US11013722申请日: 2004-12-16
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公开(公告)号: US20050135727A1公开(公告)日: 2005-06-23
- 发明人: David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
- 申请人: David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
- 申请人地址: US PA Allentown
- 专利权人: SiOptical, Inc.
- 当前专利权人: SiOptical, Inc.
- 当前专利权人地址: US PA Allentown
- 主分类号: G02B6/42
- IPC分类号: G02B6/42 ; G02B6/12
摘要:
An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
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