发明申请
- 专利标题： Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
- 专利标题（中）： 具有结场效应晶体管的碳化硅半导体器件及其制造方法
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申请号： US10984957申请日： 2004-11-10
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公开(公告)号： US20050139859A1公开(公告)日： 2005-06-30
- 发明人: Rajesh Kumar , Andrei Mihaila , Florin Udrea
- 申请人： Rajesh Kumar , Andrei Mihaila , Florin Udrea
- 优先权： JP2003-385094 20031114
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/04 ; H01L21/337 ; H01L29/24 ; H01L29/808 ; H01L29/06
摘要：
A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.
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