公开(公告)号：US07691694B2

公开(公告)日：2010-04-06

申请号：US11785276

申请日：2007-04-17

申请人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L21/337

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

摘要： A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.

摘要翻译： 碳化硅半导体器件包括衬底和结场效应晶体管。 晶体管包括：设置在基板上的第一半导体层; 设置在所述第一半导体层的表面上的第一栅极层; 与所述基板上的所述第一栅极层相邻的第一沟道层; 电连接到第一沟道层的第一源极层; 与所述第一沟道层相邻以夹住所述第一沟道层的第二栅极层; 与所述第二栅极层相邻以夹住所述第二栅极层的第二沟道层; 与所述第二沟道层相邻以夹住所述第二沟道层的第三栅极层; 以及电连接到第二沟道层的第二源极层。

公开(公告)号：US07164154B2

公开(公告)日：2007-01-16

申请号：US10995566

申请日：2004-11-24

申请人： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L29/15

CPC分类号： H01L29/8083 ,  H01L29/1608

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

摘要翻译： 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US20050139859A1

公开(公告)日：2005-06-30

申请号：US10984957

申请日：2004-11-10

申请人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L29/80 ,  H01L21/04 ,  H01L21/337 ,  H01L29/24 ,  H01L29/808 ,  H01L29/06

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

摘要： A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.

摘要翻译： 碳化硅半导体器件包括衬底和结场效应晶体管。 晶体管包括：设置在基板上的第一半导体层; 设置在所述第一半导体层的表面上的第一栅极层; 与所述基板上的所述第一栅极层相邻的第一沟道层; 电连接到第一沟道层的第一源极层; 与所述第一沟道层相邻以夹住所述第一沟道层的第二栅极层; 与所述第二栅极层相邻以夹住所述第二栅极层的第二沟道层; 与所述第二沟道层相邻以夹住所述第二沟道层的第三栅极层; 以及电连接到第二沟道层的第二源极层。

公开(公告)号：US20050145852A1

公开(公告)日：2005-07-07

申请号：US10995566

申请日：2004-11-24

申请人： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L29/24 ,  H01L29/808 ,  H01L29/15

CPC分类号： H01L29/8083 ,  H01L29/1608

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

摘要翻译： 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US20050006716A1

公开(公告)日：2005-01-13

申请号：US10776338

申请日：2004-02-12

申请人： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

发明人： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC分类号： H01L21/04 ,  H01L21/337 ,  H01L21/8232 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/07 ,  H01L27/088 ,  H01L27/095 ,  H01L29/24 ,  H01L29/80 ,  H01L29/808 ,  H01L29/00

CPC分类号： H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

摘要： A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

摘要翻译： 半导体器件包括：第一场效应晶体管，其包括源极和栅极，并设置在碳化硅衬底中; 以及包括漏极和栅极并设置在所述衬底中的第二场效应晶体管。 第二场效应晶体管的漏极连接到第一场效应晶体管的源极。 第二场效应晶体管的栅极连接到第一场效应晶体管的栅极。

公开(公告)号：US20070102708A1

公开(公告)日：2007-05-10

申请号：US11594896

申请日：2006-11-09

申请人： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

发明人： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC分类号： H01L31/0312 ,  H01L29/76

CPC分类号： H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

摘要： A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

摘要翻译： 半导体器件包括：第一场效应晶体管，其包括源极和栅极，并设置在碳化硅衬底中; 以及包括漏极和栅极并设置在所述衬底中的第二场效应晶体管。 第二场效应晶体管的漏极连接到第一场效应晶体管的源极。 第二场效应晶体管的栅极连接到第一场效应晶体管的栅极。

公开(公告)号：US07154130B2

公开(公告)日：2006-12-26

申请号：US10776338

申请日：2004-02-12

申请人： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

发明人： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

摘要： A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

公开(公告)号：US20060284217A1

公开(公告)日：2006-12-21

申请号：US11501777

申请日：2006-08-10

申请人： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L29/80

CPC分类号： H01L29/8083 ,  H01L29/1608

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

摘要翻译： 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US07005678B2

公开(公告)日：2006-02-28

申请号：US10984953

申请日：2004-11-10

申请人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L31/0312

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

摘要翻译： 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。

公开(公告)号：US20050151158A1

公开(公告)日：2005-07-14

申请号：US10984953

申请日：2004-11-10

申请人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

发明人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC分类号： H01L29/06 ,  H01L21/04 ,  H01L21/337 ,  H01L21/8232 ,  H01L27/06 ,  H01L29/24 ,  H01L29/808 ,  H01L29/15 ,  H01L21/332

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

摘要翻译： 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。