- 专利标题: Transverse or longitudinal patterned synthetic exchange biasing for stabilizing GMR sensors
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申请号: US11036959申请日: 2005-01-14
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公开(公告)号: US20050141149A1公开(公告)日: 2005-06-30
- 发明人: Cheng Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Zheng , Simon Liao , Kochan Ju , Cherng Han
- 申请人: Cheng Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Zheng , Simon Liao , Kochan Ju , Cherng Han
- 专利权人: HEADWAY TECHNOLOGIES, INC.
- 当前专利权人: HEADWAY TECHNOLOGIES, INC.
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G11B5/31 ; G11B5/39 ; G11B5/33 ; G11B5/127
摘要:
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
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